Photoreflectance-probed excited states in InAs/InGaAlAs quantum dashes grown on InP substrate

被引：40
|
作者：
Rudno-Rudzinski, W.
Kudrawiec, R.
Podemski, P.
Sek, G.
Misiewicz, J.
Somers, A.
Schwertberger, R.
Reithmaier, J. P.
Forchel, A.
机构：
[1] Wroclaw Tech Univ, Inst Phys, PL-50370 Wroclaw, Poland
[2] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期
关键词：
D O I：
10.1063/1.2226503
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoreflectance (PR) measurements have been performed on InAs/In0.53Ga0.23Al0.24As quantum dashes (QDashes) molecular-beam epitaxy grown on InP substrate. The PR features related to all relevant parts of the structure have been detected, including the ground and excited state optical transitions in QDashes. QDash ground state transition shifts from 1.5 to almost 2 mu m with the increase in the thickness of InAs layer, corresponding to the increase in the average size of the dashes. Excited state transitions have been clearly observed at the energy of about 150 meV above the ground state transition energy. (c) 2006 American Institute of Physics.
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页数：3
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