Apparent barrier height in scanning tunneling microscopy revisited

被引：137

作者：

Olesen, L ^{[1
]}

Brandbyge, M ^{[1
]}

Sorensen, MR ^{[1
]}

Jacobsen, KW ^{[1
]}

Laegsgaard, E ^{[1
]}

Stensgaard, I ^{[1
]}

Besenbacher, F ^{[1
]}

机构：

[1] TECH UNIV DENMARK,DEPT PHYS,CTR ATOM SCALE MAT PHYS,DK-2800 LYNGBY,DENMARK

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 09期

关键词：

D O I：

10.1103/PhysRevLett.76.1485

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The apparent barrier height phi(ap), that is, the rate of change of the logarithm of the conductance with tip-sample separation in a scanning tunneling microscope (STM), has been measured for Ni, Pt, and Au single crystal surfaces. The results show that phi(ap) is constant until point contact is reached rather than decreasing at small tunneling gap distances, as previously reported. The findings for phi(ap) can be accounted for theoretically by including the relaxations of the tip-surface junction in an STM due to the strong adhesive forces at close proximity. These relaxation effects are shown also to be generally relevant under imaging conditions at metal surfaces.

引用

页码：1485 / 1488

页数：4

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