Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

被引：85

作者：

Jacobs, B ^{[1
]}

Kramer, MCJCM ^{[1
]}

Geluk, EJ ^{[1
]}

Karouta, F ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 1-2期

关键词：

semiconducting gallium compounds; field effect transistors; heterojunction semiconductor devices;

D O I：

10.1016/S0022-0248(02)00920-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 Omega mm (7.3 x 10(-7) Omega cm(2)), a good reproducibility and an excellent line definition, making this contact very suitable for use in AlGaN/GaN FETs with short gate-source distances. This contact resistance on FET material is among the best values reported. The approach presented here can be applied to other metal schemes like Ti/Al/Pt/Au or Ti/Al/Ti/Au. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：15 / 18

页数：4

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