Correlation between Plasma OES and Properties of B-doped Diamond Films Grown by MW PE CVD

被引：1

作者：

Belousov, M. E. ^{[1
]}

Krivchenko, V. A. ^{[1
]}

Minakov, P. V. ^{[1
]}

Pal', A. F. ^{[1
]}

Rakhimov, A. T. ^{[1
]}

Suetin, N. V. ^{[1
]}

Sen', V. V. ^{[1
]}

机构：

[1] Moscow MV Lomonosov State Univ, DV Skobeltsyn Inst Nucl Phys, Moscow 119991, Russia

来源：

EUROCVD 17 / CVD 17 | 2009年 / 25卷 / 08期

关键词：

BORON;

D O I：

10.1149/1.3207599

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Boron doped polycrystalline diamond films were grown using MW PE CVD technique. Optical emission spectra (OES) of MW-plasma in the region from 200 nm to 800 nm during boron doped polycrystalline diamond films growth were in situ investigated. Raman spectroscopy method was used for structural investigation of grown polycrystalline diamond films. Also, absorption spectroscopy method was used for optical properties investigation of all grown films.

引用

页码：257 / 263

页数：7

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