The photo-electrical properties of the p-Si/Fe(II)-polymeric complex/Au diode

In this study, the Schiff base monomer was prepared by a common condensation method of salicyldehyde and (E)-3-amino-4((3-bromophenyl)diazenyl)-1H-pyrazol-5-ol. The poly(Schiff base) was synthesized from the oxidative polycondensation of the Schiff base monomer with NaOCl in an aqueous alkaline medium. After obtaining Schiff base polymer, Fe(II)-polymeric complex with Fe(II) of Schiff base polymer was successfully synthesized. Ligand, monomer, Schiff base polymer and Fe(II)-polymeric complex were characterized using elemental analysis, H-1 NMR, C-13 NMR, FT IR, GPC, UV-vis and magnetic susceptibility. Then, we fabricated the p-Si/Fe(II)-polymeric complex/Au diode and investigated the electronic and photoconductivity properties of the p-Si/Fe(II)-polymeric complex/Au diode by current-voltage measurements under dark and various illumination conditions. We calculated the electrical and photo-electrical parameters of the p-Si/Fe(II)-polymeric complex/Au diode such as the rectification ratio (r), ideality factor (n), barrier height (Phi(b)), Richardson constant (A*), series (R-s) and shunt resistance (R-sh) and photocurrent (I-ph), responsivity (R) and photoconductivity sensitivity (S). The obtained n values confirm the presence of a combination of recombination and diffusion currents in the p-Si/Fe(II)-polymeric complex/Au diode. The r, n, Phi(b), R-s and R-sh values of the p-Si/Fe(II)-polymeric complex/Au diode decreased with increasing illumination intensity. The l(ph), R and S values of the p-Si/Fe(II)-polymeric complex/Au diode increased with increasing illumination intensity. The synthesized Fe(II)-polymeric complex exhibits semiconductor property, it can be used in production of the metal-semiconductor (Schottky) diode and it is sensitive to light. The p-Si/Fe(II)-polymeric complex/Au diode exhibits a photoconductivity effect. (C) 2013 Elsevier B.V. All rights reserved.