Synthesis of aligned carbon nanotubes using thermal chemical vapor deposition

被引:246
|
作者
Lee, CJ
Kim, DW
Lee, TJ
Choi, YC
Park, YS
Lee, YH [1 ]
Choi, WB
Lee, NS
Park, GS
Kim, JM
机构
[1] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Chonju 561756, South Korea
[2] Kunsan Natl Univ, Dept Elect Engn, Kunsan 573701, South Korea
[3] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
[4] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
[5] Samsung Adv Inst Technol, Analyt Engn Lab, Suwon 440600, South Korea
[6] Chonbuk Natl Univ, Semicond Phys Res Ctr, Chonju 561756, South Korea
关键词
D O I
10.1016/S0009-2614(99)01074-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Aligned carbon nanotubes have been synthesized on transition metal-coated silicon substrates with C2H2 using thermal chemical vapor deposition. It was found that nanotubes can be mostly vertically aligned on a large area of plain Si substrates when the density of metal domains reaches a certain value. Pretreatment of Co-Ni alloy by HF dipping and etching with NH, gas prior to the synthesis is crucial for vertical alignment. Steric hindrance between nanotubes at an initial stage of growth forces nanotubes to align vertically. Nanotubes are grown by a catalyst-cap growth mechanism. Applications to field emission displays are demonstrated with emission patterns. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:461 / 468
页数:8
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