Spin-on-doping for output power improvement of silicon nanowire array based thermoelectric power generators

被引:17
|
作者
Xu, B. [1 ]
Fobelets, K. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect & Elect Engn, London SW7 2BT, England
关键词
DIFFUSION; DOPANT;
D O I
10.1063/1.4881781
中图分类号
O59 [应用物理学];
学科分类号
摘要
The output power of a silicon nanowire array (NWA)-bulk thermoelectric power generator (TEG) with Cu contacts is improved by spin-on-doping (SOD). The Si NWAs used in this work are fabricated via metal assisted chemical etching (MACE) of 0.01-0.02 Omega cm resistivity n-and p-type bulk, converting similar to 4% of the bulk thickness into NWs. The MACE process is adapted to ensure crystalline NWs. Current-voltage and Seebeck voltage-temperature measurements show that while SOD mainly influences the contact resistance in bulk, it influences both contact resistance and power factor in NWA-bulk based TEGs. According to our experiments, using Si NWAs in combination with SOD increases the output power by an order of 3 under the same heating power due to an increased power factor, decreased thermal conductivity of the NWA and reduced Si-Cu contact resistance. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:6
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