Carrier-wave Rabi flopping signatures in high-order harmonic generation

被引：0

作者：

Ciappina, M. F. ^{[1
]}

Perez-Hernandez, J. A. ^{[2
]}

Landsman, S. ^{[3
]}

Zimmermann, T. ^{[4
]}

Lewensteine, M. ^{[5
,6
]}

Roso, L. ^{[2
]}

Krausz, F. ^{[1
,7
]}

机构：

[1] Max Planck Inst Quantum Opt, D-85748 Garching, Germany

[2] Ctr Laseres Pulsados CLPU, E-37008 Salamanca, Spain

[3] Max Planck Inst Phys Komplexer Syst, D-01187 Dresden, Germany

[4] ETH, Dept Phys, CH-8093 Zurich, Switzerland

[5] ICFO Inst Ciences Foton, Castelldefels 08860, Spain

[6] ICREA Inst Catalana Recerca & Estudis Avancats, Lluis Co 23, Barcelona 08010, Spain

[7] LMU Munchen, Dept Phys, D-85748 Garching, Germany

来源：

XXIX INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC, AND ATOMIC COLLISIONS (ICPEAC2015), PTS 1-12 | 2015年 / 635卷

关键词：

D O I：

10.1088/1742-6596/635/9/092032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present theoretical investigations of carrier-wave Rabi flopping (CWRF) in real atoms by studying high-order harmonic generation in alkali species. We concentrate on the features of the third harmonic of Na and K atoms. For pulse areas of 27 and Na atoms, a characteristic unique peak appears, which, after analyzing the ground state population, we correlate it with the conventional Rabi flopping. On the other hand, for larger pulse areas and K atoms, CWRF occurs, and it is associated with a more complex structure in the third harmonic. These new characteristics indicate the breakdown of the area theorem, as was already demonstrated in narrow band gap semiconductors.

引用

页数：1

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