Accurate depth profiling for ultra-shallow implants using backside-SIMS

被引：7
|
作者：
Hongo, C
Tomita, M
Takenaka, M
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[2] Toshiba Co Ltd, Ctr Corp Res & Dev, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 231卷
关键词：
backside-SIMS; ultra-shallow doping; SIMS response function; atomic mixing effect; surface transient;
D O I：
10.1016/j.apsusc.2004.03.236
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied methods for accurate depth profiling for ultra-shallow implants using backside-SIMS. For the measurement of ultra-shallow profiles, the effects of surface transient and atomic mixing are not negligible. Therefore, we applied backside-SIMS to analyze ultra-shallow doping in order to exclude these effects. Backside-SIMS profiles show a sharper ion implantation tail than surface-side-SIMS profiles. In addition, the primary ion energy dependence becomes weaker when backside-SIMS is used [Surf. Interf. Anal. 29 (2000) 362; Appl. Surf. Sci. 203-204 (2003) 264; J. Vac. Sci. Technol. B 21 (2003) 1422]. However, the peak concentration of the backside sample was lower than that of the surface-side sample. Therefore, the sample flatness was estimated using the SIMS response function. Furthermore, SIMS profiles were simulated using SIMS response functions. This simulation shows how the sample flatness affects the SIMS profile. (C) 2004 Elsevier B.V. All rights reserved.
引用
下载
收藏
页码：673 / 677
页数：5
相关论文
共 50 条
  • [31] Study of electrical measurement techniques for ultra-shallow dopant profiling
    Ishida, E
    Felch, SB
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 397 - 403
  • [32] Accurate electrical activation characterization of CMOS ultra-shallow profiles
    Clarysse, T
    Dortu, F
    Vanhaeren, D
    Hoflijk, I
    Geenen, L
    Janssens, T
    Loo, R
    Vandervorst, W
    Pawlak, BJ
    Ouzeaud, V
    Defranoux, C
    Faifer, VN
    Current, MI
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 114 : 166 - 173
  • [33] Study of electrical measurement techniques for ultra-shallow dopant profiling
    Ishida, Emi
    Felch, Susan B.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1996, 14 (01):
  • [34] Simultaneous determination of ultra-shallow junction depth and abruptness using thermal wave technique
    Salnick, A
    Nicolaides, L
    Opsal, J
    Jain, A
    Rogers, D
    Robertson, L
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2004, 75 (06): : 2144 - 2148
  • [35] Ultra-shallow junction measurements: A review of SIMS approaches for annealed and processed wafers
    Mount, GR
    Smith, SP
    Hitzman, CJ
    Chia, VKF
    Magee, CW
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY, 1998, 449 : 757 - 765
  • [36] Influence of changes in the resistivity of the sample surface on ultra-shallow SIMS profiles for arsenic
    Barozzi, M.
    Giubertoni, D.
    Pederzoli, S.
    Anderle, M.
    Iacob, E.
    Bersani, M.
    APPLIED SURFACE SCIENCE, 2006, 252 (19) : 7286 - 7289
  • [37] Quantitative analysis of the top 5 nm of boron ultra-shallow implants
    Bellingham, J
    Dowsett, MG
    Collart, E
    Kirkwood, D
    APPLIED SURFACE SCIENCE, 2003, 203 : 851 - 854
  • [38] Activation and thermal stability of ultra-shallow B+- implants in Ge
    Yates, B. R.
    Darby, B. L.
    Petersen, D. H.
    Hansen, O.
    Lin, R.
    Nielsen, P. F.
    Romano, L.
    Doyle, B. L.
    Kontos, A.
    Jones, K. S.
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (12)
  • [39] Engineering ultra-shallow junctions using fRTP™
    Camm, DM
    Gelpey, JC
    Thrum, T
    Stuart, GC
    Elliott, JK
    10TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2002, 2002, : 5 - 10
  • [40] Ultralow-energy SIMS for shallow semiconductor depth profiling
    Chanbasha, A. R.
    Wee, A. T. S.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1307 - 1310
12345