Accurate depth profiling for ultra-shallow implants using backside-SIMS

被引：7
|
作者：
Hongo, C
Tomita, M
Takenaka, M
机构：
[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
[2] Toshiba Co Ltd, Ctr Corp Res & Dev, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 231卷
关键词：
backside-SIMS; ultra-shallow doping; SIMS response function; atomic mixing effect; surface transient;
D O I：
10.1016/j.apsusc.2004.03.236
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We studied methods for accurate depth profiling for ultra-shallow implants using backside-SIMS. For the measurement of ultra-shallow profiles, the effects of surface transient and atomic mixing are not negligible. Therefore, we applied backside-SIMS to analyze ultra-shallow doping in order to exclude these effects. Backside-SIMS profiles show a sharper ion implantation tail than surface-side-SIMS profiles. In addition, the primary ion energy dependence becomes weaker when backside-SIMS is used [Surf. Interf. Anal. 29 (2000) 362; Appl. Surf. Sci. 203-204 (2003) 264; J. Vac. Sci. Technol. B 21 (2003) 1422]. However, the peak concentration of the backside sample was lower than that of the surface-side sample. Therefore, the sample flatness was estimated using the SIMS response function. Furthermore, SIMS profiles were simulated using SIMS response functions. This simulation shows how the sample flatness affects the SIMS profile. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：673 / 677
页数：5
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