Low-energy electron energy loss spectroscopy of monolayer and thick La@C82 films grown on MOS2 substrates

被引：0

作者：

Ueno, K ^{[1
]}

Uchino, Y ^{[1
]}

Iizumi, K ^{[1
]}

Koma, A ^{[1
]}

Saiki, K ^{[1
]}

Inada, Y ^{[1
]}

Nagai, K ^{[1
]}

Iwasa, Y ^{[1
]}

Mitani, T ^{[1
]}

机构：

[1] Univ Tokyo, Dept Chem, Bunkyo Ku, Tokyo 1130033, Japan

来源：

NANONETWORK MATERIALS: FULLERENES, NANOTUBES AND RELATED SYSTEMS | 2001年 / 590卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolayer and multilayer La@C-82 films were epitaxially grown on MoS2 substrates, and their growth features together with electronic states were investigated using atomic force microscopy and electron energy loss spectroscopy. It was found that the interaction between a La@C-82 molecule and a MoS2 surface is stronger than that between La@C-82 Molecules. The electronic state of the initial La@C-82 layer on the MoS2 surface differs from that of the successively grown bulk-like layers due to excess electrons in the carbon cage of La@C-82.

引用

页码：485 / 488

页数：4

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