First-principles study of spin-transfer torque in Co2MnSi/Al/Co2MnSi spin-valve

被引:6
|
作者
Tang, Ling [1 ]
Yang, Zejin [1 ]
机构
[1] Zhejiang Univ Technol, Dept Appl Phys, Hangzhou 310023, Zhejiang, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
MAGNETIC MULTILAYER; EXCITATION; SPRAM; WRITE;
D O I
10.1063/1.4831959
中图分类号
O59 [应用物理学];
学科分类号
摘要
The spin-transfer torque (STT) in Co2MnSi(CMS)/Al/Co2MnSi spin-valve system with and without interfacial disorder is studied by a first-principles noncollinear wave-function-matching method. It is shown that in the case of clean interface the angular dependence of STT for CoCo/Al (the asymmetry parameter Lambda approximate to 4.5) is more skewed than that for MnSi/Al (Lambda approximate to 2.9), which suggests the clean CoCo/Al architecture is much more efficient for the application on radio frequency oscillation. We also find that even with interfacial disorder the spin-valve of half-metallic CMS still has a relatively large parameter K compared to that of conventional ferromagnet. In addition, for clean interface the in-plane torkance of MnSi/Al is about twice as large as that of CoCo/Al. However, as long as the degree of interfacial disorder is sufficiently large, the CoCo/Al and MnSi/Al will show approximately the same magnitude of in-plane torkance. Furthermore, our results demonstrate that CMS/Al/CMS system has very high efficiency of STT to switch the magnetic layer of spin-valve. (C) 2013 AIP Publishing LLC.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Enhancement of spin-asymmetry by L21-ordering in Co2MnSi/Cr/Co2MnSi current-perpendicular-to-plane magnetoresistance devices
    Sakuraba, Y.
    Iwase, T.
    Saito, K.
    Mitani, S.
    Takanashi, K.
    APPLIED PHYSICS LETTERS, 2009, 94 (01)
  • [42] First principle study of Co2MnSi/GaAs(001) heterostructures
    Ghaderi, Nahid
    Hashemifar, S. Javad
    Akbarzadeha, Hadi
    Peressi, Maria
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (07)
  • [43] Spin currents injected electrically and thermally from highly spin polarized Co2MnSi
    Pfeiffer, Alexander
    Hu, Shaojie
    Reeve, Robert M.
    Kronenberg, Alexander
    Jourdan, Martin
    Kimura, Takashi
    Klaeui, Mathias
    APPLIED PHYSICS LETTERS, 2015, 107 (08)
  • [44] First-principles calculation of the effects of tetragonal distortions on the Gilbert damping parameter of Co2MnSi
    Pradines, B.
    Arras, R.
    Calmels, L.
    AIP ADVANCES, 2017, 7 (05):
  • [45] High power radio frequency oscillation by spin transfer torque in a Co2MnSi layer: Experiment and macrospin simulation
    Seki, Takeshi
    Sakuraba, Yuya
    Okura, Ryo
    Takanashi, Koki
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (03)
  • [46] The effect of the interface oxidation on tunneling conductance of Co2MnSi/MgO/Co2MnSi magnetic tunnel junction
    Miura, Yoshio
    Abe, Kazutaka
    Shirai, Masafumi
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (06)
  • [47] Half-metallic electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions investigated by tunneling spectroscopy (invited)
    Ishikawa, Takayuki
    Itabashi, Naoki
    Taira, Tomoyuki
    Matsuda, Ken-ichi
    Uemura, Tetsuya
    Yamamoto, Masafumi
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [48] Large spin accumulation signal in half-metallic Co2MnSi based lateral spin valve devices
    Yang, Fujun
    Kang, Zewei
    Chen, Xiaoqin
    Xue, Yun
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (32)
  • [49] Numerical simulation of magnetization process in epitaxial Co2MnSi/Cr/Co2MnSi trilayers with oscillatory interlayer coupling
    Wang, H.
    Mitani, S.
    Sato, A.
    Saito, K.
    Takanashi, K.
    Yakushiji, K.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [50] Exploring the physical properties of Co2MnSi full Heusler alloy: a first principles study
    Kumar, Arvind
    Srivastava, Neelabh
    Chaudhary, Vikrant
    Atul, Anadi Krishna
    Jharwal, Swati
    Negi, Amit Singh
    Prajapati, Brijmohan
    Singh, Rishi P.
    Kumar, Manish
    Kumar, Jitesh
    OPTICAL AND QUANTUM ELECTRONICS, 2024, 56 (03)