Trapping of majority carriers in SiO2/4H-SiC structures

被引：18

作者：

Palmieri, R. ^{[1
]}

Radtke, C. ^{[2
]}

Silva, M. R. ^{[1
]}

Boudinov, H. ^{[1
]}

da Silva, E. F., Jr. ^{[3
]}

机构：

[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande do Sul, Inst Quim, BR-91501970 Porto Alegre, RS, Brazil

[3] Univ Fed Pernambuco, Dept Fis, BR-50670901 Recife, PE, Brazil

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 12期

关键词：

ELECTRICAL-PROPERTIES; BORDER TRAPS; P-TYPE; INTERFACE; OXIDATION; CAPACITORS; STATES;

D O I：

10.1088/0022-3727/42/12/125301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We compared SiO2/SiC interface characteristics for three different oxidation processes (dry-oxygen, water-containing oxygen and water-containing nitrogen atmospheres). Metal-oxide-semiconductor (MOS) structures were fabricated on 8 degrees off-axis 4H-SiC(0001) n- and p-type epitaxial wafers. Electrical characteristics were obtained by I-V measurements, high-frequency capacitance-voltage (C-V) and ac conductance (G-V and G-omega) methods. The samples were also characterized by x-ray photoelectron spectroscopy. Results evidence a remarkable difference between n- and p-type doped samples. The p-type samples showed effective oxide charge density up to three orders of magnitude higher than n-type. This fact was explained by the capturing of majority carriers in near interface oxide traps.

引用

页数：6

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