Silicon fiber with p-n junction

被引:12
|
作者
Homa, D. [1 ]
Cito, A. [1 ]
Pickrell, G. [1 ]
Hill, C. [1 ]
Scott, B. [1 ]
机构
[1] Virginia Polytech Inst & State Univ, Dept Mat Sci & Engn, Blacksburg, VA 24060 USA
关键词
FABRICATION; FILAMENTS;
D O I
10.1063/1.4895661
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 mu m and core diameters of 20-800 mu m. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:3
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