Advanced Alkali Treatments for High-Efficiency Cu(In,Ga)Se2 Solar Cells on Flexible Substrates

被引:178
|
作者
Carron, Romain [1 ]
Nishiwaki, Shiro [1 ]
Feurer, Thomas [1 ]
Hertwig, Ramis [1 ]
Avancini, Enrico [1 ]
Lockinger, Johannes [1 ]
Yang, Shih-Chi [1 ]
Buecheler, Stephan [1 ]
Tiwari, Ayodhya N. [1 ]
机构
[1] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Uberlandstr 129, CH-8600 Dubendorf, Switzerland
基金
瑞士国家科学基金会; 欧盟地平线“2020”;
关键词
alkali; CIGS; Cu(In; Ga)Se-2; flexible; PDT; THIN-FILMS; LOW-TEMPERATURE; POSTDEPOSITION TREATMENT; ELECTRONIC-PROPERTIES; CU(IN; DIFFUSION; FLUORIDE; GROWTH; INDIUM; LAYERS;
D O I
10.1002/aenm.201900408
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Flexible, lightweight Cu(In,Ga)Se-2 (CIGS) solar cells grown on polymer substrates are a promising technology with fast growing market prospects. However, power conversion efficiencies of solar cells grown at low temperatures (approximate to 450 degrees C) remain below the efficiencies of cells grown at high temperature on glass substrates. This contribution discusses the impact on cell efficiency of process improvements of low-temperature CIGS deposition on flexible polyimide and glass substrates. Different strategies for incorporation of alkali elements into CIGS are evaluated based on a large number of depositions. Postdeposition treatment with heavy alkali (here RbF) enables a thickness reduction of the CdS buffer layer and increases the open-circuit voltage. Na supply during 3rd stage CIGS deposition positively impacts the cell performance. Coevaporation of heavy alkali (e.g., RbF) during capping layer deposition mitigates the adverse shunting associated with high Cu contents, yielding highest efficiencies with near-stoichiometric absorber compositions. Furthermore, optimization of the deposition sequence results in absorbers with a 1 mu m wide notch region with nearly constant bandgap minimum. The improved processes result in a record cell efficiency of 20.8% for CIGS on flexible substrate.
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页数:8
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