Characterizing the Influence of Gate Bias on Electrical and Catalytical Properties of a Porous Platinum Gate on Field Effect Gas Sensors

被引:0
|
作者
Bastuck, M. [1 ,2 ]
Puglisi, D. [2 ]
Spetz, A. Lloyd [2 ]
Schuetze, A. [1 ]
Andersson, M. [2 ]
机构
[1] Univ Saarland, Lab Measurement Technol, Saarbrucken, Germany
[2] Linkoping Univ, IFM, Div Appl Sensor Sci, Linkoping, Sweden
来源
关键词
silicon carbide; MISFET; binary response; carbon monoxide; ammonia; CARBON-MONOXIDE; DISSOCIATION; MECHANISM; OXYGEN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, we exposed an MIS capacitor with porous platinum as gate material to different concentrations of CO and NH3. Its capacitance and typical reaction products (water, CO2 and NO) were monitored at high and low oxygen concentration and different gate bias voltages. We found that the gate bias influences the switch-point of the binary CO response usually seen when either changing the temperature at constant gas concentrations or the CO/O-2 ratio at constant temperature. For NH3, the sensor response as well as product reaction rates increase with bias voltages up to 6 V. A capacitance overshoot is observed when switching on or off either gas at low gate bias, suggesting increasing oxygen surface coverage with decreasing gate bias.
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页数:3
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