AlGaN Light-Emitting Diodes on AlN Substrates Emitting at 230nm

被引：35
|
作者：
Moe, Craig G. [1 ]
Sugiyama, Sho [2 ]
Kasai, Jumpei [2 ]
Grandusky, James R. [1 ]
Schowalter, Leo J. [1 ]
机构：
[1] Crystal IS Inc, 70 Cohoes Ave, Green Isl, NY 12183 USA
[2] Asahi Kasei, Fuji, Shizuoka 4168501, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 10期
关键词：
AlGaN; ultraviolet light-emitting diodes;
D O I：
10.1002/pssa.201700660
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Light-emitting diodes with emission wavelengths between 230 and 240nm are grown on AlN substrates and characterized optically and electrically. Optimized doping of the n-AlGaN with Si has resulted in a mean forward voltage at 200mA of 9V. The electroluminescence spectra is demonstrated to be free of long wavelength parasitic emission. An envelope function in the output power versus peak wavelength is shown, demonstrating the increasing dominance of in-plane emission at shorter wavelengths as light extraction becomes more difficult. However, variations in device structure show that further optimization of the structure for carrier confinement and injection efficiency are also able to push performance beyond the current state of the art.
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页数：5
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