Physically based modeling of squeeze film damping by mixed-level system simulation

被引:51
|
作者
Schrag, G [1 ]
Wachutka, G [1 ]
机构
[1] Tech Univ Munich, Inst Phys Electrotechnol, D-80290 Munich, Germany
关键词
squeeze film damping effects; mixed-level simulation; compact modeling;
D O I
10.1016/S0924-4247(01)00840-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose a mixed-level simulation scheme for squeeze film damping (SQFD) effects in microdevices, which enables the inclusion of these effects in system-level models of entire microsystems. Our treatment of SQFD follows a natural physically based and flexible methodology, which also allows for complex geometries and coupling between different energy and signal domains. The proposed damping model is realized in VHDL-AMS and, therefore, can easily be included in system-level models for full system simulation. Results obtained for elementary and complex microstructures show excellent agreement with 3D Navier-Stokes-based FEM simulations, but are computationally by far less expensive, thus proving the quality and power of our approach. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:193 / 200
页数:8
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