Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties

被引：14

作者：

Wu, Di ^{[1
]}

Jiang, Yang ^{[1
]}

Yao, Xudong ^{[1
]}

Chang, Yajing ^{[1
]}

Zhang, Yugang ^{[1
]}

Yu, Yongqiang ^{[1
]}

Zhu, Zhifeng ^{[1
]}

Zhang, Yan ^{[1
]}

Lan, Xinzheng ^{[1
]}

Zhong, Honghai ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 32期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

CORE-SHELL NANOWIRES; SINGLE;

D O I：

10.1039/c4tc01034e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb-doped p-type ZnTe nanoribbons (NRs) and Ga-doped n-type CdSe NRs were synthesized via a co-thermal evaporation method in a horizontal tube furnace, respectively. Crossbar heterojunction diode (HD) devices were constructed from p-ZnTe:Sb NRs and n-CdSe NRs by a convenient route. The p-ZnTe/n-CdSe NR HD device exhibits a significant rectification characteristic with a rectification ratio up to 10(3) within +/- 5 V and a low turn-on voltage of 2.6 V. Photoresponse analysis reveals that such HD devices were highly sensitive to light illumination with excellent stability, reproducibility and fast response speeds of 37/118 mu s at reverse bias voltage. It is expected that such HD devices will have great potential applications in electronic and optoelectronic devices in the future.

引用

页码：6547 / 6553

页数：7

共 29 条

[21] ELECTRICAL PROPERTIES OF CU2-XSE-CDSE P-N HETEROJUNCTIONS
KOMASHCHENKO, VN
FEDORUS, GA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (08): : 1001 - +
[22] Manufacture and Electrical Properties of p-n Si-CdSe Heterojunctions.
Ruzyllo, Jerzy
Jakubowski, Andrzej
Chrzanowska, Malgorzata
Krupa, Andrzej
1600, (24):
[23] One-sided rectifying p-n junction diodes fabricated from n-CdS and p-ZnTe:Te semiconductors
Olusola, O. I.
Salim, H. I.
Dharmadasa, I. M.
MATERIALS RESEARCH EXPRESS, 2016, 3 (09)
[24] Influence of temperature and illumination on the electrical properties of p-ZnTe/n-CdTe heterojunction grown by molecular beam epitaxy
Farag, A. A. M.
Yahia, I. S.
Wojtowicz, T.
Karczewski, G.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2010, 43 (21)
[25] High-Resolution X-Ray Diffraction Studies on MBE-Grown p-ZnTe/n-CdTe Heterojunctions for Solar Cell Applications
Wichrowska, K.
Domagala, J. Z.
Wosinski, T.
Chusnutdinow, S.
Karczewski, G.
ACTA PHYSICA POLONICA A, 2014, 126 (05) : 1083 - 1086
[26] Structurally complex two-hole and two-electron slow traps with bikinetic properties in p-ZnTe and n-ZnS crystals
M. A. Rizakhanov
E. M. Zobov
M. M. Khamidov
Semiconductors, 2004, 38 : 48 - 55
[27] Structurally complex two-hole and two-electron slow traps with bikinetic properties in p-ZnTe and n-ZnS crystals
Rizakhanov, MA
Zobov, EM
Khamidov, MM
SEMICONDUCTORS, 2004, 38 (01) : 48 - 55
[28] Electrical properties of p-ZnTe/n+-GaAs junctions grown at different Te/Zn beam equivalent pressure ratios by molecular beam epitaxy
Kolkovsky, V.
Kolkovsky, Vl.
Karczewski, G.
JOURNAL OF APPLIED PHYSICS, 2016, 120 (20)
[29] Influence of temperature on bandgap shifts, optical properties and photovoltaic parameters of GaAs/AlAs and GaAs/AlSb p-n heterojunctions: insights from ab-initio DFT plus NEGF studies
Mamindla, Ramesh
Niranjan, Manish K.
JOURNAL OF PHYSICS-CONDENSED MATTER, 2024, 36 (20)

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