Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties

被引：14

作者：

Wu, Di ^{[1
]}

Jiang, Yang ^{[1
]}

Yao, Xudong ^{[1
]}

Chang, Yajing ^{[1
]}

Zhang, Yugang ^{[1
]}

Yu, Yongqiang ^{[1
]}

Zhu, Zhifeng ^{[1
]}

Zhang, Yan ^{[1
]}

Lan, Xinzheng ^{[1
]}

Zhong, Honghai ^{[1
]}

机构：

[1] Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 32期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

CORE-SHELL NANOWIRES; SINGLE;

D O I：

10.1039/c4tc01034e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb-doped p-type ZnTe nanoribbons (NRs) and Ga-doped n-type CdSe NRs were synthesized via a co-thermal evaporation method in a horizontal tube furnace, respectively. Crossbar heterojunction diode (HD) devices were constructed from p-ZnTe:Sb NRs and n-CdSe NRs by a convenient route. The p-ZnTe/n-CdSe NR HD device exhibits a significant rectification characteristic with a rectification ratio up to 10(3) within +/- 5 V and a low turn-on voltage of 2.6 V. Photoresponse analysis reveals that such HD devices were highly sensitive to light illumination with excellent stability, reproducibility and fast response speeds of 37/118 mu s at reverse bias voltage. It is expected that such HD devices will have great potential applications in electronic and optoelectronic devices in the future.

引用

页码：6547 / 6553

页数：7

共 29 条

[1] Construction of crossed heterojunctions from p-ZnTe and n-CdSe nanoribbons and their photoresponse properties
Wu, Di
Jiang, Yang
Yao, Xudong
Chang, Yajing
Zhang, Yugang
Yu, Yongqiang
Zhu, Zhifeng
Zhang, Yan
Lan, Xinzheng
Zhong, Honghai
Journal of Materials Chemistry C, 2014, 2 (32): : 6547 - 6553
[2] Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction
Shashidhara Acharya
Kasturi V. Bangera
G. K. Shivakumar
Journal of Electronic Materials, 2016, 45 : 3324 - 3331
[3] Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction
Acharya, Shashidhara
Bangera, Kasturi V.
Shivakumar, G. K.
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (07) : 3324 - 3331
[4] n-ZnSe/p-ZnTe/n-CdSe tandem solar cells
Gashin, P
Focsha, A
Potlog, T
Simashkevich, AV
Leondar, V
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 46 (04) : 323 - 331
[5] Working Characteristics Simulation of p(+)-CuO / p-ZnTe / n-CdSe / n-MoSe2 / Mo Solar Cell
Opanasyuk, A. S.
Ivashchenko, M. M.
Buryk, I. P.
Moroz, V. A.
JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2015, 7 (02)
[6] PROPERTIES OF N-P CDSE-ZNTE HETEROJUNCTIONS
VANYUKOV, AV
KIREEV, PS
FIGUROVS.EN
KOROVIN, AP
VISHNYAK.ZP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (10): : 1297 - &
[7] Electrical properties and transport mechanisms of p-znte/n-si heterojunctions
Seyam, M. A. M.
El-Shair, H. T.
Salem, G. F.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 41 (03): : 221 - 227
[8] n-CdSe/p-ZnTe based wide band-gap light emitters. Numerical simulation and design
1600, (73):
[9] N-CDSE/P-ZNTE BASED WIDE BAND-GAP LIGHT EMITTERS - NUMERICAL-SIMULATION AND DESIGN
WANG, MW
PHILLIPS, MC
SWENBERG, JF
YU, ET
MCCALDIN, JO
MCGILL, TC
JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) : 4660 - 4668
[10] Influence of ZnTe intrinsic layer on the performance of p-ZnTe/n-Si heterojunctions
Qin, Kaifeng
Li, Lunjuan
Huang, Jian
Tang, Ke
Zhang, Xiaotian
Cao, Meng
Shen, Yue
Wang, Linjun
SURFACE & COATINGS TECHNOLOGY, 2017, 320 : 153 - 157

← 1 2 3 →