2DEG transport properties in AlGaN/GaN double heterostructure HEMT with high In composition InGaN channel

被引：2

作者：

Peng, Daqing ^{[1
]}

Dong, Xun ^{[1
]}

Li, Zhonghui ^{[1
]}

Zhang, Dongguo ^{[1
]}

Li, Liang ^{[1
]}

Ni, Jinyu ^{[1
]}

Luo, Weike ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

来源：

ENERGY AND POWER TECHNOLOGY, PTS 1 AND 2 | 2013年 / 805-806卷

关键词：

HEMT; AlGaN/GaN heterostructure; InGaN channel; 2DEG; FIELD-EFFECT TRANSISTORS; RF-MBE; EPILAYERS; FILMS;

D O I：

10.4028/www.scientific.net/AMR.805-806.1027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

AlGaN/InGaN/GaN double heterostructure high electron mobility transistor (HEMT) with In composition from 0.08 to 0.26 were grown by MOCVD. 2DEG density and mobility of different channel In composition were investigated. When In composition below 0.19, 2DEG density increased nearly linearly with In composition, and the mobility decreased a bit. While In composition over 0.19, phase separation became more serious, 2DEG density nearly not changed, and the mobility dropped sharply. A high 2DEG mobility of 1163 cm(2)/V.s with low sheet resistance of 342 Omega/square was obtained with In composition 0.19.

引用

页码：1027 / 1030

页数：4

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