Correlations between microstructure and dielectric properties of hexagonal boron nitride

被引:10
|
作者
Steinborn, Clemens [1 ]
Herrmann, Mathias [1 ]
Keitel, Uwe [1 ]
Schoenecker, Andreas [1 ]
Eichler, Jens [2 ]
机构
[1] Fraunhofer Inst Ceram Technol & Syst, Dresden, Germany
[2] ESK Ceram GmbH & Co KG, Kempten, Germany
关键词
Hexagonal boron nitride; Dielectric properties; Dielectric breakdown resistance; Permittivity; ELECTRICAL-RESISTIVITY; CERAMICS; BN;
D O I
10.1016/j.jeurceramsoc.2014.01.005
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Hexagonal boron nitride is a material with a unique combination of mechanical, chemical, and electrical properties and therefore of considerable technical and commercial interest. Nevertheless, there exists only very limited knowledge concerning the correlation of microstructure and electrical and dielectrical properties of such materials. In this work, the microstructure, dielectric breakdown resistance (dielectric strength), and low permittivity of different BN ceramics and composites were investigated. Besides exhibiting a very high specific electrical resistivity of 10(13)-10(15) Omega cm, the materials had excellent dielectric strengths (up to 53 kV/mm) and low electrical permeability (4.1). The dielectric strength depended strongly on the porosity and to a lesser extent on the content of secondary phases, whereas the permittivity was influenced by the secondary phases. The aging of the materials in humid air did not significantly alter these values. The permittivity was found to be independent of frequency between 0.1 MHz and 10 MHz and temperature up to 300 degrees C. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1703 / 1713
页数:11
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