Photosensitivity of silicon-porous silicon heterostructures

被引：2
|
作者：
Astrova, EV [1 ]
Lebedev, AA [1 ]
Remenyuk, AD [1 ]
Rud, VY [1 ]
Rud, YV [1 ]
机构：
[1] STATE TECH UNIV,ST PETERSBURG 194021,RUSSIA
来源：
THIN SOLID FILMS | 1997年 / 297卷 / 1-2期
关键词：
photosensitivity oscillations; porous silicon; heterostructure; polarization;
D O I：
10.1016/S0040-6090(96)09531-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photosensitivity of silicon-porous silicon heterostructures has been studied. The measured photocurrent intensity as a function of photon energy showed oscillations in both polarized and unpolarized light. Assuming that photocurrent oscillations were due to light interference in thin porous silicon layers, the refractive index was estimated as 1.6-1.8. At normal light incidence there was no effect of the direction of light polarization, but at oblique light incidence the photocurrent when the light electrical vector coincided with the incidence plane exceeded that at perpendicular polarization, due to a difference in reflectivity. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：129 / 131
页数：3
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