Green Light-Emitting Phases Induced by Al Addition in Full-Color Ba3MgSi2O8:Eu2+,Mn2+ Phosphor for White-Light-Emitting Diodes

被引：9
|
作者：
Wang, Da-jian [1 ]
Liu, Ling-yun
机构：
[1] Tianjin Univ Technol, Lab Display Mat & Photoelect Devices, Minist Educ, Tianjin 300384, Peoples R China
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 05期
基金：
中国国家自然科学基金;
关键词：
aluminium; barium compounds; europium; gallium compounds; III-V semiconductors; light emitting diodes; magnesium compounds; manganese; phosphors; photoluminescence; wide band gap semiconductors; PHOTOLUMINESCENT PROPERTIES; LUMINESCENT PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; MN2+ PHOSPHOR; BA3MGSI2O8-EU2+; EXCITATION; EMISSION; BAAL2O4; EU2+;
D O I：
10.1149/1.3086729
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Through previous findings of green-light-emitting Ba2SiO4 phase in full-color Ba3MgSi2O8:Eu2+,Mn2+ phosphor for near-UV GaN-based white-light-emitting diodes, we present a route to compensate green band emission for full-color band emission by intentionally adding Al ion to promote the formation of green-light-emitting Ba2SiO4 and BaAl2O4 phases in Ba3MgSi2O8. The variation of Al-added amount leads to amount change of each phase in the mixed phases and adjustable energy transfer of Eu-Mn on sites in different hosts of phases are verified, consequently full-color band emission could be achieved in the potential application of white light.
引用
收藏
页码：H179 / H181
页数：3
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