High-temperature scanning tunneling microscopy study of Si(111) surface structure changes caused by Ga surface diffusion

被引：2

作者：

Ichikawa, T ^{[1
]}

Onodera, T ^{[1
]}

Mizoguchi, A ^{[1
]}

机构：

[1] Meijo Univ, Sch Sci & Technol, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4A期

关键词：

Ga surface reaction; Ga surface diffusion; Ga-induced superstructure; high-temperature STM; surface structure transition; precursor;

D O I：

10.1143/JJAP.41.2176

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to clarify dynamical transition behaviors among Ga-induced superstructures' on Si(111) surface, a Ga block was placed on a Si(111) surface elevated at 175degreesC and 500degreesC and surface structure changes caused by Ga surface diffusion from the Ga block were in-situ studied by high-temperature scanning tunneling microscopy. Successive structure changes from 7 x 7 dimer adatom stacking-fault (DAS) to 6.3 x 6.3 structure through alpha'-7 x 7 were observed in detail on the Si(111) surface at 170degreesC. No intermediate structure appeared between 7 x 7 DAS and (root3 xroot3)R30 structures on the Si(111) surface at 500degreesC.

引用

页码：2176 / 2182

页数：7

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