High-temperature scanning tunneling microscopy study of Si(111) surface structure changes caused by Ga surface diffusion

被引：2
|
作者：
Ichikawa, T [1 ]
Onodera, T [1 ]
Mizoguchi, A [1 ]
机构：
[1] Meijo Univ, Sch Sci & Technol, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4A期
关键词：
Ga surface reaction; Ga surface diffusion; Ga-induced superstructure; high-temperature STM; surface structure transition; precursor;
D O I：
10.1143/JJAP.41.2176
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to clarify dynamical transition behaviors among Ga-induced superstructures' on Si(111) surface, a Ga block was placed on a Si(111) surface elevated at 175degreesC and 500degreesC and surface structure changes caused by Ga surface diffusion from the Ga block were in-situ studied by high-temperature scanning tunneling microscopy. Successive structure changes from 7 x 7 dimer adatom stacking-fault (DAS) to 6.3 x 6.3 structure through alpha'-7 x 7 were observed in detail on the Si(111) surface at 170degreesC. No intermediate structure appeared between 7 x 7 DAS and (root3 xroot3)R30 structures on the Si(111) surface at 500degreesC.
引用
收藏
页码：2176 / 2182
页数：7
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