Photoconductive LT-GaAs Terahertz Antennas: Correlation Between Surface Quality and Emission Strength

被引:4
|
作者
Abdulmunem, O. M. [1 ,2 ]
Hassoon, K. I. [3 ]
Voelkner, J. [4 ]
Mikulics, M. [5 ]
Gries, K. I. [1 ,2 ]
Balzer, J. C. [1 ,2 ]
机构
[1] Philipps Univ Marburg, Dept Phys, Hans Meerwein Str 6, D-35032 Marburg, Germany
[2] Philipps Univ Marburg, Mat Sci Ctr, Hans Meerwein Str 6, D-35032 Marburg, Germany
[3] Univ Technol Baghdad, Dept Appl Sci, Baghdad, Iraq
[4] Philipps Univ Marburg, Fac Phys, Renthof 7, D-35037 Marburg, Germany
[5] Forschungszentrum Julich, Peter Grunberg Inst PGI 9, D-52425 Julich, Germany
关键词
THz time-domain spectroscopy; Low-temperature grown GaAs; Photoconductive antenna; Coplanar stripline; TEMPERATURE-GROWN GAAS; CARRIER LIFETIME; SPECTROMETER; SPECTROSCOPY; PHOTOMIXER; RADIATION;
D O I
10.1007/s10762-016-0353-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We investigate the influence of the surface properties of a low-temperature-grown GaAs photoconductive antenna on the terahertz (THz) emission strength, using a specially designed THz time-domain spectroscopy system. The system allows us to excite six different positions along the 10 mu m gap of a coplanar stripline antenna with a length of 10 mm without changing the alignment of the optical or THz beam path. A comparison to the surface roughness and the grain size which are extracted from an atomic force and a scanning electron microscope is given.
引用
收藏
页码:574 / 582
页数:9
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