Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix

被引：37

作者：

Navarro-Urrios, D. ^{[1
,3
]}

Pitanti, A. ^{[1
]}

Daldosso, N. ^{[1
]}

Gourbilleau, F. ^{[2
]}

Rizk, R. ^{[2
]}

Garrido, B. ^{[3
]}

Pavesi, L. ^{[1
]}

机构：

[1] Univ Trent, Lab Nanosci, Dipartimento Fis, I-38100 Trento, Italy

[2] CEA, CIMAP, CNRS 6252, UMR, F-14050 Caen, France

[3] Univ Barcelona, Dept Elect, MIND IN2UB, E-08028 Barcelona, CAT, Spain

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 19期

关键词：

amorphous state; atomic clusters; elemental semiconductors; erbium; excited states; nanostructured materials; positive ions; silicon; OPTICAL-PROPERTIES; POROUS SILICON; LUMINESCENCE;

D O I：

10.1103/PhysRevB.79.193312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the energy-transfer mechanism between amorphous Si nanoclusters and erbium ions in a SiO2 matrix. We have studied a set of optimized samples which show maximum Er3+ to Si-nc coupling ratio. We demonstrate that the transfer mainly occurs to the I-4(11/2) level in less than 100 ns and that higher Er3+ energetic levels are not involved. Furthermore, we show that there are no traces of Auger back-transfer, excited state absorption, or pair-induced quenching mechanisms in our samples, leading us to propose a model in which the short interaction distance between Si-nc and Er3+ ions is the limiting factor for the noncomplete excitation of the whole Er3+ active population.

引用

页数：4

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