Excitation of Er3+ ions in SiO2 with Si nanocrystals

被引：3
|
作者：
Prokofiev, A. A. [1 ]
Moskalenko, A. S. [2 ]
Yassievich, I. N. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Univ Halle Wittenberg, Inst Phys, D-06120 Halle, Germany
来源：
SEMICONDUCTORS | 2008年 / 42卷 / 08期
关键词：
D O I：
10.1134/S1063782608080162
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Probabilities of excitation of erbium ions via Coulomb interaction with carriers localized in silicon nanocrystals embedded in SiO2, in recombination and intraband relaxation of these carriers, have been calculated.
引用
收藏
页码：971 / 979
页数：9
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