Novel ferroelectric epitaxial (Ba,Sr)TiO3 capacitor for deep sub-micron memory applications

被引：28
|
作者：
Kawakubo, T [1 ]
Abe, K [1 ]
Komatsu, S [1 ]
Sano, K [1 ]
Yanase, N [1 ]
Mochizuki, H [1 ]
机构：
[1] TOSHIBA CO LTD,MICROELECT ENGN LAB,KAWASAKI,KANAGAWA 210,JAPAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期
关键词：
D O I：
10.1109/55.641435
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel ferroelectric capacitor cell was developed using a (Ba,Sr)TiO3 (BSTO)/SrRuO3 (SRO) heteroepitaxial technique on Si and strontium titanate substrates. Distinct ferroelectricity results from the c-axis being elongated due to lattice mismatch between the dielectric and electrode. The epitaxial BSTO capacitor showed distinct ferroelectricity even at 30 nm thickness, which is the thinnest ferroelectric film so far, Its superior ferroelectric properties, reliability, and sub-micron silicon process compatibility were confirmed.
引用
收藏
页码：529 / 531
页数：3
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