Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

被引：6

作者：

Gao, Z. ^{[1
]}

Rampazzo, F. ^{[1
]}

Meneghini, M. ^{[1
]}

De Santi, C. ^{[1
]}

Chiocchetta, F. ^{[1
]}

Marcon, D. ^{[1
]}

Meneghesso, G. ^{[1
]}

Zanoni, E. ^{[1
]}

机构：

[1] Univ Padua, Dipartimento Ingn Informaz, Via Gradenigo 6-A, I-35131 Padua, Italy

来源：

MICROELECTRONICS RELIABILITY | 2020年 / 114卷 / 114期

基金：

欧盟地平线“2020”;

关键词：

OPERATION; STRESS; CARBON;

D O I：

10.1016/j.microrel.2020.113905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 h' stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.

引用

页数：5

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