Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

被引：6
|
作者：
Gao, Z. [1 ]
Rampazzo, F. [1 ]
Meneghini, M. [1 ]
De Santi, C. [1 ]
Chiocchetta, F. [1 ]
Marcon, D. [1 ]
Meneghesso, G. [1 ]
Zanoni, E. [1 ]
机构：
[1] Univ Padua, Dipartimento Ingn Informaz, Via Gradenigo 6-A, I-35131 Padua, Italy
来源：
MICROELECTRONICS RELIABILITY | 2020年 / 114卷 / 114期
基金：
欧盟地平线“2020”;
关键词：
OPERATION; STRESS; CARBON;
D O I：
10.1016/j.microrel.2020.113905
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 h' stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.
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页数：5
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