Oxidation smoothening of silicon machined micro- and nano-scale structures

被引：5

作者：

Azimi, S. ^{[1
,2
]}

Dang, Z. Y. ^{[1
]}

Breese, M. B. H. ^{[1
,2
]}

机构：

[1] Natl Univ Singapore, Dept Phys, Ctr Ion Beam Applicat, Singapore 117542, Singapore

[2] Natl Univ Singapore, Singapore Synchrotron Light Source, Singapore 117603, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2014年 / 121卷

基金：

新加坡国家研究基金会;

关键词：

Silicon micromachining; Surface roughness; Ion beam irradiation; Electrochemical anodization; Two- and three-dimensional structures; Free-standing; SURFACE-ROUGHNESS; FABRICATION;

D O I：

10.1016/j.mee.2014.04.033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a process to machine bulk silicon in two- and three-dimensions shapes and structures. Here we briefly introduce this process and give examples of the types of surface profiles and three-dimensional geometries which can be fabricated. One of the limitations, as with all forms of silicon machining is the final surface roughness, as this introduces losses, for example in light propagation through photonic devices. Here we describe various contributing factors to the surface roughness and options to reducing it. Under optimized conditions roughness values of less than 1 nm can be achieved. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：156 / 161

页数：6

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