High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

被引：2
|
作者：
Jo, Byounggu [1 ,2 ,3 ]
Lee, Cheul-Ro [1 ,2 ]
Kim, Jin Soo [1 ,2 ]
Han, Won Seok [3 ]
Song, Jung Ho [3 ]
Choi, Jang-Hee [3 ,4 ]
Ryou, Jae-Hyun [5 ,6 ]
Lee, Jin Hong [7 ]
Leem, Jae-Young [8 ]
机构：
[1] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju 561756, South Korea
[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea
[3] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea
[4] Gwangju Insititute Sci & Technol, Schoold Mechatron, Kwangju 500712, South Korea
[5] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
[6] Univ Houston, Texas Ctr Superconduct Univ Houston TcSUH, Houston, TX 77204 USA
[7] Korea Photon Technol Inst, Kwangju 500779, South Korea
[8] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea
来源：
LASER PHYSICS LETTERS | 2014年 / 11卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
InAs quantum dot; high-power laser diode; dot-in-a-well structure; strain-modulating layer; THRESHOLD CURRENT-DENSITY; EPITAXY;
D O I：
10.1088/1612-2011/11/11/115815
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 degrees C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.
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页数：6
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