Blue shift of photoluminescence spectrum of porous silicon by helium ion irradiation

被引：5
|
作者：
Yamauchi, Y
Sakurai, T
Hirohata, Y
Hino, T
Nishikawa, M
机构：
[1] Hokkaido Univ, Dept Nucl Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Sci Solut Int Lab Inc, Meguro Ku, Tokyo 1530065, Japan
来源：
VACUUM | 2002年 / 66卷 / 3-4期
关键词：
photoluminescence; porous silicon; ion irradiation;
D O I：
10.1016/S0042-207X(02)00164-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Effects of helium ion irradiation on photoluminescence spectrum of porous silicon were investigated. Photoluminescence spectra were measured for silicon prepared by only anodization (porous silicon), by only helium ion irradiation, and by helium ion irradiation before or after anodization. The porous silicon prepared only by anodization showed a photoluminescence spectrum with a peak intensity at 650 nm. The silicon prepared only by helium ion irradiation had no photoluminescence. Silicon prepared by helium ion irradiation followed by anodization showed a blue shift in the photoluminescence spectrum. The blue shift increased as a fluence of helium ion although the intensity decreased. The present blue shift is due to change of silicon nanocrystal structure at the surface. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：415 / 418
页数：4
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