Memristor-based activation circuit for long-term memories in cognitive architectures

被引：0

作者：

Wang, P. ^{[1
]}

Phillips, B. J. ^{[1
]}

Liebelt, M. J. ^{[1
]}

机构：

[1] Univ Adelaide, Sch Elect & Elect Engn, Adelaide, SA, Australia

来源：

ELECTRONICS LETTERS | 2015年 / 51卷 / 21期

关键词：

Activation value - Cognitive architectures - Fast retrievals - High-activation - Long term memory - Memristance - Memristor;

D O I：

10.1049/el.2015.1726

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A memristor circuit that can store, maintain and compare the activation of objects in the long-term memory of a cognitive architecture is described. Objects accessed frequently or recently are assigned a high activation and are more likely to be retrieved first in a search that returns multiple matches. By using memristance to store the activation values, the circuit achieves high density and fast retrieval.

引用

页码：1639 / 1640

页数：2

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