Addressing Single Nitrogen-Vacancy Centers in Diamond with Transparent in-Plane Gate Structures

被引：45

作者：

Hauf, Moritz V. ^{[1
]}

Simon, Patrick ^{[1
]}

Aslam, Nabeel ^{[2
]}

Pfender, Matthias ^{[2
]}

Neumann, Philipp ^{[2
]}

Pezzagna, Sebastien ^{[3
]}

Meijer, Jan ^{[3
]}

Wrachtrup, Joerg ^{[2
]}

Stutzmann, Martin ^{[1
]}

Reinhard, Friedemann ^{[2
]}

Garrido, Jose A. ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-80290 Munich, Germany

[2] Univ Stuttgart, Inst Phys 3, Stuttgart, Germany

[3] Univ Leipzig, Inst Expt Phys 2, D-04109 Leipzig, Germany

来源：

NANO LETTERS | 2014年 / 14卷 / 05期

关键词：

Diamond; nitrogen-vacancy center; charge state control; in-plane gate field-effect transistor; surface termination; qubit; SURFACE CONDUCTIVITY; READ-OUT; SPIN; QUBITS;

D O I：

10.1021/nl4047619

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.

引用

页码：2359 / 2364

页数：6

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