Addressing Single Nitrogen-Vacancy Centers in Diamond with Transparent in-Plane Gate Structures

被引:45
|
作者
Hauf, Moritz V. [1 ]
Simon, Patrick [1 ]
Aslam, Nabeel [2 ]
Pfender, Matthias [2 ]
Neumann, Philipp [2 ]
Pezzagna, Sebastien [3 ]
Meijer, Jan [3 ]
Wrachtrup, Joerg [2 ]
Stutzmann, Martin [1 ]
Reinhard, Friedemann [2 ]
Garrido, Jose A. [1 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, D-80290 Munich, Germany
[2] Univ Stuttgart, Inst Phys 3, Stuttgart, Germany
[3] Univ Leipzig, Inst Expt Phys 2, D-04109 Leipzig, Germany
关键词
Diamond; nitrogen-vacancy center; charge state control; in-plane gate field-effect transistor; surface termination; qubit; SURFACE CONDUCTIVITY; READ-OUT; SPIN; QUBITS;
D O I
10.1021/nl4047619
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
For many applications of the nitrogen-vacancy (NV) center in diamond, the understanding and active control of its charge state is highly desired. In this work, we demonstrate the reversible manipulation of the charge state of a single NV center from NV- across NV0 to a nonfluorescent, dark state by using an all-diamond in-plane gate nanostructure. Applying a voltage to the in-plane gate structure can influence the energy band bending sufficiently for charge state conversion of NV centers. These diamond in-plane structures can function as transparent top gates, enabling the distant control of the charge state of NV centers tens of micrometers away from the nanostructure.
引用
收藏
页码:2359 / 2364
页数:6
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