An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
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Laboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, ChinaLaboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, China
Liu, Jie
Jia, Yu-Lei
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Laboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, ChinaLaboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, China
Jia, Yu-Lei
Yang, Ji-Min
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Laboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, ChinaLaboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, China
Yang, Ji-Min
Du, Juan
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Laboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, ChinaLaboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, China
Du, Juan
He, Jing-Liang
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Laboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, ChinaLaboratory of Modern Optics, Shandong Normal University, Ji'nan 250014, China