AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

被引：9
|
作者：
Huang, S. C. [1 ]
Chang, H. L. [1 ]
Su, K. W. [1 ]
Li, A. [1 ]
Liu, S. C. [1 ]
Chen, Y. F. [1 ]
Huang, K. F. [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan
来源：
APPLIED PHYSICS B-LASERS AND OPTICS | 2009年 / 94卷 / 03期
关键词：
OPTICAL PARAMETRIC OSCILLATOR; SOLID-STATE LASERS; EFFICIENT; EMISSION; CRYSTALS; ER3+; INP;
D O I：
10.1007/s00340-008-3346-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
引用
收藏
页码：483 / 487
页数：5
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