InGaN/GaN light emitting diodes with a lateral current blocking structure

被引：13
|
作者：
Wang, HC
Su, YK
Lin, CL
Chen, WB
Chen, SM
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Epitech Technol Corp, Tainan 74145, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词：
light emitting diodes (LEDs); InGaN/GaN; current blocking hole; light output; forward voltage;
D O I：
10.1143/JJAP.43.2006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The light output of InGaN/GaN light-emitting diodes (LEDs) was improved by introducing a current blocking hole between the n-type and p-type bonding pads. The injected current was forced to spread out instead of directly passing along the nearest path between the p-type and n-type bonding pads. The light output of the LED with a current blocking hole at 20 mA was 7.2% higher than that of the conventional LED. The forward voltage of the LED with the blocking hole was 3.29 V at 20 mA, which is slightly higher than that of the conventional LED (3.26 V). LEDs with different current blocking hole sizes were also studied.
引用
收藏
页码：2006 / 2007
页数：2
相关论文
共 50 条
  • [31] Aging of InGaN/AlGaN/GaN light-emitting diodes
    Yunovich, AE
    Kovalev, AN
    Kudryashov, VE
    Manyakhin, FI
    Turkin, AN
    NITRIDE SEMICONDUCTORS, 1998, 482 : 1041 - 1046
  • [32] Luminescence of the InGaN/GaN blue light-emitting diodes
    Sheu, JK
    Yeh, TW
    Chi, GC
    Jou, MJ
    DISPLAY TECHNOLOGIES III, 2000, 4079 : 143 - 150
  • [33] Sidewall passivation for InGaN/GaN nanopillar light emitting diodes
    Choi, Won Hyuck
    You, Guanjun
    Abraham, Michael
    Yu, Shih-Ying
    Liu, Jie
    Wang, Li
    Xu, Jian
    Mohney, Suzanne E.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (01)
  • [34] InGaN/GaN Nanowire Flexible Light Emitting Diodes and Photodetectors
    Guan, Nan
    Dai, Xing
    Zhang, Hezhi
    Mancini, Lorenzo
    Kapoor, Akanksha
    Bougerol, Catherine
    Julien, Francois H.
    Cavassilas, Nicolas
    Foldyna, Martin
    Durand, Christophe
    Eymery, Joel
    Tchernycheva, Maria
    2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON), 2017,
  • [35] Reliability study on green InGaN/GaN light emitting diodes
    Li, Z. L.
    Lai, P. T.
    Choi, H. W.
    16TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS, 2010, 209
  • [36] Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes
    Chen, Ximeng
    Gu, Huaimin
    Chen, Xiaolin
    OPTICAL ENGINEERING, 2018, 57 (10)
  • [37] Stable temperature characteristics of InGaN blue light emitting diodes using AlGaN/GaN/InGaN superlattices as electron blocking layer
    Kim, Kyu Sang
    Kim, Jin Ha
    Jung, Su Jin
    Park, Yong Jo
    Cho, S. N.
    APPLIED PHYSICS LETTERS, 2010, 96 (09)
  • [38] InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes
    Krishnamoorthy, Sriram
    Akyol, Fatih
    Rajan, Siddharth
    APPLIED PHYSICS LETTERS, 2014, 105 (14)
  • [39] Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes
    Eliseev, PG
    Perlin, P
    Furioli, J
    Sartori, P
    Mu, J
    Osinski, M
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 311 - 319
  • [40] Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes
    Petr G. Eliseev
    Piotr Perlin
    Julien Furioli
    Philippe Sartori
    Jian Mu
    Marek Osiński
    Journal of Electronic Materials, 1997, 26 : 311 - 319
12345