InGaN/GaN light emitting diodes with a lateral current blocking structure

被引：13
|
作者：
Wang, HC
Su, YK
Lin, CL
Chen, WB
Chen, SM
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[3] Epitech Technol Corp, Tainan 74145, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 4B期
关键词：
light emitting diodes (LEDs); InGaN/GaN; current blocking hole; light output; forward voltage;
D O I：
10.1143/JJAP.43.2006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The light output of InGaN/GaN light-emitting diodes (LEDs) was improved by introducing a current blocking hole between the n-type and p-type bonding pads. The injected current was forced to spread out instead of directly passing along the nearest path between the p-type and n-type bonding pads. The light output of the LED with a current blocking hole at 20 mA was 7.2% higher than that of the conventional LED. The forward voltage of the LED with the blocking hole was 3.29 V at 20 mA, which is slightly higher than that of the conventional LED (3.26 V). LEDs with different current blocking hole sizes were also studied.
引用
收藏
页码：2006 / 2007
页数：2
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