Origin of split peaks in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures

被引：5
|
作者：
Tang, N. [1 ]
Shen, B.
Han, K.
Yang, Z. J.
Xu, K.
Zhang, G. Y.
Lin, T.
Zhu, B.
Zhou, W. Z.
Shang, L. Y.
Guo, S. L.
Chu, J. H.
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 07期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2349561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The oscillatory magnetoresistance of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The split peaks of the Shubnikov-de Haas oscillations are observed at high magnetic fields, which are attributed to the spin splitting of the 2DEG. It is found that the spin splitting energy becomes smaller with an increase in magnetic field, indicating that the Zeeman spin splitting is not dominant at measured magnetic field range. Within this magnetic field range, the zero-field spin splitting, as well as Zeeman spin splitting, affects the split peaks in the oscillatory magnetoresistance of the 2DEG in AlxGa1-xN/GaN heterostructures.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Electronic states properties in GaN/AlxGa1-xN heterostructures with graded interfaces
    Dimitrov, S.
    Valcheva, E.
    Donchev, V.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2007, 9 (01): : 194 - 196
  • [32] Electrical properties of AlxGa1-xN/GaN heterostructures with low Al content
    Koehler, K.
    Mueller, S.
    Waltereit, P.
    Pletschen, W.
    Polyakov, V.
    Lim, T.
    Kirste, L.
    Menner, H. P.
    Brueckner, P.
    Ambacher, O.
    Buchheim, C.
    Goldhahn, R.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (05)
  • [33] Growth and characterization of modulation-doped AlxGa1-xN/GaN heterostructures
    Shen, B
    Zhang, R
    Shi, Y
    Zheng, YD
    Someya, T
    Arakawa, Y
    CHINESE PHYSICS LETTERS, 2001, 18 (01): : 129 - 131
  • [34] Emission and reflection spectra from AlxGa1-xN/GaN single heterostructures
    Reynolds, DC
    Hoelscher, J
    Litton, CW
    Collins, TC
    Fitch, R
    Via, GD
    Gillespie, J
    Crespo, A
    Jenkins, TJ
    Saxler, A
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) : 4263 - 4266
  • [35] Weak antilocalization in polarization-doped AlxGa1-xN/GaN heterostructures
    Thillosen, N.
    Schaepers, Th.
    Kaluza, N.
    Hardtdegen, H.
    Guzenko, V. A.
    GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 411 - +
  • [36] Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry
    Yu, G
    Ishikawa, H
    Umeno, M
    Egawa, T
    Watanabe, J
    Jimbo, T
    Soga, T
    APPLIED PHYSICS LETTERS, 1998, 72 (18) : 2202 - 2204
  • [37] Low temperature photoluminescence study of AlxGa1-xN/GaN/AlxGa1-xN heterostructure nanocolumns
    AbdelAll, Naglaa
    ElGhoul, Jaber
    Almokhtar, Mohamed
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (21)
  • [38] Ni diffusion and its influence on electrical properties of AlxGa1-xN/GaN heterostructures
    Huang, S.
    Shen, B.
    Lin, F.
    Ma, N.
    Xu, F. J.
    Miao, Z. L.
    Song, J.
    Lu, L.
    Liu, F.
    Wang, Y.
    Qin, Z. X.
    Yang, Z. J.
    Zhang, G. Y.
    APPLIED PHYSICS LETTERS, 2008, 93 (17)
  • [39] Microstructures and strain relaxation in modulation-doped AlxGa1-xN/GaN heterostructures
    Tan, WS
    Shen, B
    Sha, H
    Cai, HL
    Wu, XS
    Zheng, YD
    Jiang, SS
    Zheng, WL
    Jia, QJ
    He, Q
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2004, 18 (07): : 989 - 998
  • [40] Two-dimensional electron gas in cubic AlxGa1-xN/GaN heterostructures
    Potthast, S.
    Schoermann, J.
    Fernandez, J.
    As, D. J.
    Lischka, K.
    Nagasawa, H.
    Abe, M.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2091 - 2094
12345