Capacitive Modulator Design Optimization Using Si and Strained-SiGe for Datacom Applications

被引：5

作者：

Charlet, Ismael ^{[1
]}

Desieres, Yohan ^{[2
]}

Marris-Morini, Delphine ^{[3
]}

Boeuf, Frederic ^{[1
]}

机构：

[1] STMicroelect, F-38920 Crolles, France

[2] Univ Grenoble Alpes, LETI, Commissariat Energie Atom & Energies Alternat, Minatec Campus, F-38054 Grenoble, France

[3] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, CNRS, F-91120 Palaiseau, France

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2021年 / 27卷 / 03期

关键词：

Silicon; Optical modulation; Silicon germanium; Optical waveguides; Optimization; Optical refraction; Capacitive modulator; electro-refractive modulator; silicon photonics; strained-SiGe; SILICON; MOBILITY;

D O I：

10.1109/JSTQE.2020.3028447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using a semiconductor insulator semiconductor (SIS) architecture. In this paper, we develop a model based on a perturbative approach to optimize capacitive modulator using full-Si or including a thin layer of strained SiGe. This model is coupled with an optimization algorithm in order to estimate the highest optimal modulation amplitude for different operating frequencies.

引用

页数：8

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