High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

被引:69
|
作者
Rashidi, Arman [1 ]
Monavarian, Morteza [1 ]
Aragon, Andrew [1 ]
Okur, Serdal [1 ]
Nami, Mohsen [1 ]
Rishinaramangalam, Ashwin [1 ]
Mishkat-Ul-Masabih, Saadat [1 ]
Feezell, Daniel [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
Light-emitting diodes; gallium nitride; nonpolar; modulation bandwidth; visible light communication; EMITTING-DIODES;
D O I
10.1109/LPT.2017.2650681
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LEDs on free-standing GaN exhibit a large electron-hole wave function overlap, low extended defect density, and favorable thermal properties. Here, we demonstrate high-speed nonpolar InGaN/GaN LEDs with a peak emission wavelength between 455 and 465 nm on free-standing nonpolar GaN substrates. A large frequency modulation bandwidth of 524 MHz is demonstrated at a current density of 10 kA/cm(2).
引用
收藏
页码:381 / 384
页数:4
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