High-Power 25-Gb/s Electroabsorption Modulator Integrated With a Laser Diode

被引：31
|
作者：
Takahashi, Hiroyuki [1 ]
Shimamura, Tomonori [2 ]
Sugiyama, Takashi [2 ]
Kubota, Munechika [2 ]
Nakamura, Koji [1 ]
机构：
[1] Oki Elect Ind Co Ltd, Network Technol Labs, Corp Res & Dev Ctr, Tokyo 1938550, Japan
[2] Oki Semicond Co Ltd, Opt Component Unit, LSI Dev Headquarters, Tokyo 1938550, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 9-12期
关键词：
Electroabsorption (EA) modulator integrated laser diode (LD); high-power electroabsorption modulator integrated laser diode (EML); 100-Gb/s Ethernet; ridge-type laser diode (LD);
D O I：
10.1109/LPT.2009.2015581
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-power 1.3-mu m electroabsorption modulator integrated laser diode was developed for 100-Gb/s Ethernet applications. The average output power exceeding 6.5 dBm and clear eye opening with dynamic extinction ratio over 7.6 dB were realized at 35 degrees C.
引用
收藏
页码：633 / 635
页数：3
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