Temperature dependence of bulk luminescence from ZnO

被引:14
|
作者
Cui, Meima [1 ]
Zhang, Zili [1 ]
Wang, Yafang [1 ]
Finch, Adrian [2 ]
Townsend, P. D. [3 ]
机构
[1] China Univ Geosci, Sch Sci, Beijing 100083, Peoples R China
[2] Univ St Andrews, Dept Earth & Environm Sci, St Andrews, Fife, Scotland
[3] Univ Sussex, Phys Bldg, Brighton, E Sussex, England
基金
中国国家自然科学基金;
关键词
radioluminescence; temperature dependence; thermoluminescence; ZnO defects; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE PROPERTIES;
D O I
10.1002/bio.3460
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
X-Ray excited luminescence (radioluminescence, RL) spectra from nominally pure crystalline zinc oxide (ZnO) are reported. The temperature range is from 20 to 673K. Significant changes of emission band energies and intensities are observed across the temperature range. Photon energies of emission bands linked to the band gap decrease with increasing temperature in RL. This dependence fits the theoretical equations describing the temperature response of the ZnO band gap. Defect related luminescence includes a complex mixture of features at low temperature for RL. Thermoluminescence (TL) signals from 20 to 300K confirm the presence of an unresolved feature in the RL data. Comments on the possible origin of these bands are summarized. The data underline that it is essential to record the temperature dependence for the luminescence data in order to separate overlapping spectral features.
引用
收藏
页码:654 / 659
页数:6
相关论文
共 50 条
  • [31] THE TEMPERATURE AND INPUT POWER DEPENDENCE OF THE INTERMODULATION SIGNAL FROM BULK SUPERCONDUCTORS
    BAILEY, GC
    EHRLICH, AC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 244 - 244
  • [32] Temperature dependence of the deviations from bulk behavior in ultrathin polymer films
    Napolitano, Simone
    Lupascu, Veronica
    Wubbenhorst, Michael
    MACROMOLECULES, 2008, 41 (04) : 1061 - 1063
  • [33] Temperature dependence of raman scattering in ZnO
    Cusco, Ramon
    Alarcon-Llado, Esther
    Ibanez, Jordi
    Artus, Luis
    Jimenez, Juan
    Wang, Buguo
    Callahan, Michael J.
    PHYSICAL REVIEW B, 2007, 75 (16)
  • [34] Temperature dependent exciton photoluminescence of bulk ZnO
    Hamby, DW
    Lucca, DA
    Klopfstein, MJ
    Cantwell, G
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (06) : 3214 - 3217
  • [35] Room-temperature blue luminescence from ZnO:Er thin films
    Zhang, XT
    Liu, YC
    Ma, JG
    Lu, YM
    Shen, DZ
    Xu, W
    Zhong, GZ
    Fan, XW
    THIN SOLID FILMS, 2002, 413 (1-2) : 257 - 261
  • [36] Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape
    A. N. Gruzintsev
    A. N. Redkin
    C. Barthou
    Semiconductors, 2010, 44 : 628 - 633
  • [37] Dependence of the stimulated luminescence threshold in ZnO nanocrystals on their geometric shape
    Gruzintsev, A. N.
    Redkin, A. N.
    Barthou, C.
    SEMICONDUCTORS, 2010, 44 (05) : 628 - 633
  • [38] Temperature dependence of cross-luminescence bandwidth
    Makhov, V.N.
    Terekhin, M.A.
    Munro, I.H.
    Mythen, C.
    Shaw, D.A.
    Journal of Luminescence, 1997, 72-74 : 114 - 115
  • [39] Temperature and Viscosity Dependence of Gold Nanodot Luminescence
    Choi, Sungmoon
    Jeong, Yujin
    Yu, Junhua
    EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2017, (40) : 4696 - 4701
  • [40] TEMPERATURE DEPENDENCE OF LUMINESCENCE AND PHOTOCONDUCTIVITY OF SILVER HALIDES
    KOZYREVA, EB
    VLASOV, VG
    MEIKLYAR, PV
    OPTICS AND SPECTROSCOPY-USSR, 1969, 26 (05): : 458 - &