Temperature dependence of bulk luminescence from ZnO

被引:14
|
作者
Cui, Meima [1 ]
Zhang, Zili [1 ]
Wang, Yafang [1 ]
Finch, Adrian [2 ]
Townsend, P. D. [3 ]
机构
[1] China Univ Geosci, Sch Sci, Beijing 100083, Peoples R China
[2] Univ St Andrews, Dept Earth & Environm Sci, St Andrews, Fife, Scotland
[3] Univ Sussex, Phys Bldg, Brighton, E Sussex, England
基金
中国国家自然科学基金;
关键词
radioluminescence; temperature dependence; thermoluminescence; ZnO defects; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE PROPERTIES;
D O I
10.1002/bio.3460
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
X-Ray excited luminescence (radioluminescence, RL) spectra from nominally pure crystalline zinc oxide (ZnO) are reported. The temperature range is from 20 to 673K. Significant changes of emission band energies and intensities are observed across the temperature range. Photon energies of emission bands linked to the band gap decrease with increasing temperature in RL. This dependence fits the theoretical equations describing the temperature response of the ZnO band gap. Defect related luminescence includes a complex mixture of features at low temperature for RL. Thermoluminescence (TL) signals from 20 to 300K confirm the presence of an unresolved feature in the RL data. Comments on the possible origin of these bands are summarized. The data underline that it is essential to record the temperature dependence for the luminescence data in order to separate overlapping spectral features.
引用
收藏
页码:654 / 659
页数:6
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