Aging Effect on the Efficiency of Cu(In,Ga)Se2/CdS Solar Cells

被引：1
|
作者：
Kim, Deok-In [1 ]
Jeon, Chan-Wook [1 ]
机构：
[1] Yeungnam Univ, Sch Chem Engn, Gyongsan 712749, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2015年 / 11卷 / 06期
关键词：
solar cell; Cu(In; Ga)Se-2; Cu electromigration; doping density; aging effect; annealing; STABILITY; METASTABILITIES;
D O I：
10.1007/s13391-015-5007-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical performance of two different types of Cu(Jn,Ga)Se-2/CdS solar cells were measured repeatedly over a period of several months. One of the solar cells initially showed cross-over in its current-voltage curve, whereas the other showed normal p-n diode operation. The efficiencies of both devices were found to improve with aging due to the significantly increased doping density in the space charge region. The long-term aging effect was found to be irreversible and disappeared after thermal annealing of the device at relatively low temperature. The increase in doping density was attributed to Cu electromigration under the influence of a built-in electric field existing in the space charge region of the absorbers.
引用
收藏
页码：1048 / 1052
页数：5
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