Effect of electron irradiation on the photopleochroism of ZnO/CdS/Cu(In,Ga)Se2 solar cells

被引：0
|
作者：
Bairamov, BK [1 ]
Nikolaev, YA
Rud', VY
Rud', YV
Terukov, EI
Yakushev, MV
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] St Petersburg State Tech Univ, St Petersburg 195251, Russia
[3] Univ Strathclyde, Glasgow G4 0NG, Lanark, Scotland
来源：
TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 08期
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of irradiation with 1-MeV electrons to various doses on the photosensitivity of ZnO/CdS/Cu(In,Ga)Se-2 solar cells and related CdS/Cu(In,Ga)Se-2 and ZnO/Cu(In,Ga)Se-2 heterostructures has been studied. Both the photoconversion efficiency and the coefficient of induced photopleochroism of ZnO/CdS/CIGS solar cells remained practically unchanged upon irradiation up to a total dose of 10(-17) cm(-2). It is suggested that the method of polarization photoelectric spectroscopy can be used for evaluating the effect of electron irradiation on the photosensitivity of semiconductor photoconverters. (C) 2005 Pleiades Publishing, Inc.
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页码：698 / 701
页数：4
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